L. Chkhartishvili. Density of electron states in wurtzite-like boron nitride: A quasi-classical calculation. Mater. Sci. Ind. J.. 2006წ. 2, 1, 18-23.

G. Giorgadze. Density problem of monodromy representation of Fuchsian systems. In book “Further Progress in Analysis” Ed. H.Begehr, A.Celebi, R.Gilbert,Word Scientific, pp.347-356. 2009წ. .

A. Meskhi, ი.სავანო. Density, duality and preduality in grand variable exponent Lebesgue and Morrey spaces. Mediterranean Journal of Mathematics. 2018წ. 15: 100. https://doi.org/10.1007/s00009-018-1145-5.

T. Minashvili, K.Davitadze Z.Gogua G.Kantidze. Dependence Between the energy-gap width and shallow impurities in semiconductors with tetrahedral symmetry. AIR TRANSPORT . 2015წ. 1(10), p.p 42-49.

L. Chkhartishvili, G. P. Tsiskarishvili, O. A. Tsagareishvili, G. G. Gvelesiani, J. N. Tsikaridze. Dependence of beta-boron conductance on the frequency and the electric current value. Proc. 9th Int. Symp. Boron, Borides & Rel. Comp. Duisburg: UDG. 1987წ. 360-361.

G. Eliava, Topuria L.S., Mzhavanadze R.G., Tabidze M.Sh.. Dependence of Physical Activity on Functional Status of Airways and its Importance in Rehabilitation Processes. VII International Conference “Modern Aspects of Rehabilitation in Medicine” Armenia, Yerevan, 16-18.09.2015. 2015წ. 50.

B. Mesablishvili. Descent in *-autonomous categories . Journal of Pure and Applied Algebra. 2009წ. vol. 213, pp. 60-70.

B. Mesablishvili. Descent in categories of (co)algebras . Homology, Homotopy and Applications . 2005წ. vol. (1), pp. 1-8.

B. Mesablishvili. Descent theory for schemes. Applied Categegorical Structures . 2004წ. vol. 12, pp. 485-512.

G. Giorgadze, Pantsulaia G. Description of the behavior of phase motions defained by generalized von Foerster-Lasota equations in Rn interms of ordinary and standard “Lebesgue Measuris” . Georgian International Journal of Science... volume 4, Number 1, Nova Science Publishers, Inc. 2012წ. pp. 53-61.

A. Ediberidze, M. Nikolashvili, N. Abuashvili. Design of Electronic Payment System for Using into Internet. Proceedings of Euromedia’ Conference, Muenchen. 1999წ. pp.247-249.

Z. Chakhnakia. Design of high-speed gates based on heterostructural technology. . . Z.Tchakhnakia, I.Sikmashvili, G.Didebashvili, R.Melkadze. Design of high-speed gates based on heterostructural technology. Proceedings 2-nd International Conference on Microelectronics (MIEL’2000), Proceedings of the Conference MIEL’2000. Nis. 0წ. .

M. Okrosashvili, O.I. Mikadze, D.D. Ebanoidze B.P. Bulia, T.A. DzigraShvili, N.I. Maisuradze. Design of Nev Compozitions and Technological Procedures of High-Temperature Coating on chromium Super¬alloys. . Metallophysics and NevestMTechnologies. ИМФ НАН Украины. 2005წ. т.26, №10, с.1297-1305.

ო. ისაკის ძე მიქაძე, M.Okrosashvili, D.Ebanoidze, B.Bulia, T.Dzigrashvili. Design of New Composition and Technological Procedures of High Temperature Coatings on Chromium Superalloys. Metallofiz. Noveishie Tekhnol. Kiev, 27№10. 2005წ. .

T. Dzigrashvili, O.Mikadze M.Okrosashvili D.Ebanoidze B.Bulia . Design of new Composition and Technology procedures of High-Temperature Coating on Chromium Superalloys. Metallofizika. Noveish. Technol. Kiev, Ukraine. 2005წ. V.27, #10, p.p. 1297-1305 .

ნ. მაისურაძე, O.I. Mikadze, M.N. Okrosashvili, D.D. Ebanoidze, B.P. Bulia, T.A. Dzigrashvili, N.I. Maisuradze. Design of New Compositions and Technological Procedures of High- Temperature Coating on Chromium Superalloys.. Metallofiz. Noveishie Technol., . 2005წ. v.27, №10, 2005, pp. 1297-1305..

გ. ყიფიანი. Design procedure on stability of three-layered plate with cuts and holes. Georgian International Journal of Science and Technology, Vol. 1, № 4, New York, . 2008წ. pp. 327-342, ISSN 1939-5825.

O. Ruxadze, R. Turmanidze, R. Bidzinashvili, E. Rukhadze. Designing fundamentals of investigation equipment of rotors with the parameters of variable geometry . Problems of mechanics. 2011წ. # 1(42)/2011 p. 16-23.

K. Davitadze, Z. Gogua, T. Minashvili. Despersion of electronics on ionized admistures in semiconductors in quasi-demensional siemiconductor systems. International Scientific Journal “Air Transport” . 2016წ. N1 (1) .

T. Minashvili, K. Davitadze Z. Gogua. Despersion of electronics on ionized admistures in semiconductors in quasi-demensional siemiconductor systems. International Scientific Journal “Air Transport” . 2016წ. N1 (11), p.p. 59-63.